11/3/2023 0 Comments Hf radio transistor![]() This allows simultaneous use of mutually different silicides on gate electrode and source/ drain areas and reduces the risk of silicide shorts. ![]() A refined process scheme is described and experimentally verified. In paper 1, the polycide configuration is extended for reducing the two major constraints inherent to the salicide method. The salicide method takes the polycide idea a few steps further by selectively forming self-aligned silicide on exposed gate and source/ drain areas. In the polycide configuration the polycrystalline silicon used as gate material is shunted by a silicide layer to reduce RC time constants and resistive voltage drops. The subjects treated in the thesis reflect today's industrial oriented research and development activities in this area, but the thesis also commemorates the inventention of the bipolar transistor 50 years ago by reviewing the early developments of the transistor and the integrated circuit.Īs integrated MOSFET dimensions are reduced, contact and interconnection parasitics tend to become more important and will ultimately limit overall circuit performance. The last decade has seen tremendous progress and expansion in the wireless telecommunication field, and greater efforts than ever are spent on improving and understanding semiconductor devices, especially their high-speed properties. The most important application area for the transistors studied in the thesis is radio frequency telecommunication. This thesis is about transistors, integrated circuits and techniques to fabricate electronic devices in semiconductor materials. ![]() 1998 (English) Doctoral thesis, comprehensive summary (Other academic) Abstract
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |